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Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf0.5Zr0.5O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory | IEEE Journals & Magazine | IEEE Xplore

Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf0.5Zr0.5O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory


Abstract:

This work presents the design and experimental demonstration of a novel dual-storage-port nonvolatile SRAM based on back-end-of-the-line processed Hf0.5Zr0.5O2-based meta...Show More

Abstract:

This work presents the design and experimental demonstration of a novel dual-storage-port nonvolatile SRAM based on back-end-of-the-line processed Hf0.5Zr0.5O2-based metal-ferroelectric-metal capacitors, which offers significant advantages over the conventional single-storage-port version without area penalty, and paves the way for implementing our proposed selector-free 3D cross-point memory.
Page(s): 935 - 938
Date of Publication: 24 August 2020
Electronic ISSN: 2168-6734

Funding Agency:


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