Abstract:
This work presents the design and experimental demonstration of a novel dual-storage-port nonvolatile SRAM based on back-end-of-the-line processed Hf0.5Zr0.5O2-based meta...Show MoreMetadata
Abstract:
This work presents the design and experimental demonstration of a novel dual-storage-port nonvolatile SRAM based on back-end-of-the-line processed Hf0.5Zr0.5O2-based metal-ferroelectric-metal capacitors, which offers significant advantages over the conventional single-storage-port version without area penalty, and paves the way for implementing our proposed selector-free 3D cross-point memory.
Published in: IEEE Journal of the Electron Devices Society ( Volume: 8)