Abstract:
Previous cryogenic electronics studies are mostly at 77K and 4.2K. Cryogenic characterization of a 0.18μm standard bulk CMOS technology (operating voltages: 1.8V and 5V) ...Show MoreMetadata
Abstract:
Previous cryogenic electronics studies are mostly at 77K and 4.2K. Cryogenic characterization of a 0.18μm standard bulk CMOS technology (operating voltages: 1.8V and 5V) is presented in this paper. Several NMOS and PMOS devices with different width to length ratios (W/L) were extensively tested and characterized under various bias conditions at sub-kelvin temperature. In addition to devices dc characteristics, the kink effect and current overshoot phenomenon are observed and discussed at sub-kelvin temperature. Especially, the current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of MOSFET devices (1.8V W/L = 10μm/10μm) at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures.
Published in: IEEE Journal of the Electron Devices Society ( Volume: 8)
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- IEEE Keywords
- Index Terms
- Transfer Characteristics ,
- Current Phenomenon ,
- Root Mean Square Error ,
- Time Delay ,
- Simulated Data ,
- Hysteresis ,
- Output Feature ,
- Bias Voltage ,
- Semi-empirical ,
- Extraction Parameters ,
- Hold Time ,
- Compact Model ,
- Device Data ,
- Saturation Region ,
- Electron Channel ,
- Forward Scan ,
- Device Thickness ,
- Abnormal Phenomenon ,
- Sufficient Speed ,
- Back-end-of-line
- Author Keywords
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Transfer Characteristics ,
- Current Phenomenon ,
- Root Mean Square Error ,
- Time Delay ,
- Simulated Data ,
- Hysteresis ,
- Output Feature ,
- Bias Voltage ,
- Semi-empirical ,
- Extraction Parameters ,
- Hold Time ,
- Compact Model ,
- Device Data ,
- Saturation Region ,
- Electron Channel ,
- Forward Scan ,
- Device Thickness ,
- Abnormal Phenomenon ,
- Sufficient Speed ,
- Back-end-of-line
- Author Keywords