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4.2 An E-Band High-Linearity Antenna-LNA Front-End with 4.8dB NF and 2.2dBm IIP3 Exploiting Multi-Feed On-Antenna Noise-Canceling and Gm-Boosting | IEEE Conference Publication | IEEE Xplore

4.2 An E-Band High-Linearity Antenna-LNA Front-End with 4.8dB NF and 2.2dBm IIP3 Exploiting Multi-Feed On-Antenna Noise-Canceling and Gm-Boosting


Abstract:

In this paper, we explore the antenna-electronics co-design concept on RX topologies to enhance key RX performance at high mm-wave frequencies, such as NF and linearity. ...Show More

Abstract:

In this paper, we explore the antenna-electronics co-design concept on RX topologies to enhance key RX performance at high mm-wave frequencies, such as NF and linearity. For proof-of-concept, we present an E-band high-linearity muiti-feed-antenna-LNA co-designed front-end in a 45nm CMOS SOI process that supports applications like wireless back -haul and automotive radar. It exploits on -antenna noise -canceling, gm-boosting, and power-division to improve E -band RX NF and linearity achievable in silicon front-ends, and the high-resistivity silicon substrate enables high-efficiency on-chip antennas and one-chip integration with front-end electronics without packaging complexity.
Date of Conference: 16-20 February 2020
Date Added to IEEE Xplore: 13 April 2020
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Conference Location: San Francisco, CA, USA
Georgia Institute of Technology, Atlanta, GA
Rice University, Houston, TX
Georgia Institute of Technology, Atlanta, GA
Georgia Institute of Technology, Atlanta, GA
Georgia Institute of Technology, Atlanta, GA
Georgia Institute of Technology, Atlanta, GA

Georgia Institute of Technology, Atlanta, GA
Rice University, Houston, TX
Georgia Institute of Technology, Atlanta, GA
Georgia Institute of Technology, Atlanta, GA
Georgia Institute of Technology, Atlanta, GA
Georgia Institute of Technology, Atlanta, GA

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