4.2 An E-Band High-Linearity Antenna-LNA Front-End with 4.8dB NF and 2.2dBm IIP3 Exploiting Multi-Feed On-Antenna Noise-Canceling and Gm-Boosting

In this paper, we explore the antenna-electronics co-design concept on RX topologies to enhance key RX performance at high mm-wave frequencies, such as NF and linearity. For proof-of-concept, we present an E-band high-linearity muiti-feed-antenna-LNA co-designed front-end in a 45nm CMOS SOI process that supports applications like wireless back -haul and automotive radar. It exploits on -antenna noise -canceling, g_m-boosting, and power-division to improve E -band RX NF and linearity achievable in silicon front-ends, and the high-resistivity silicon substrate enables high-efficiency on-chip antennas and one-chip integration with front-end electronics without packaging complexity.

Merging antennas with front-end circuits creates a new design paradigm to advance front-end innovations and performance beyond electronics-only designs. Instead of being viewed as single-port 500 radiation loads, antennas are perceived as multi-feed passive networks interfacing with front-end circuits, so that optimum near-field I/V distributions are actively synthesized for desired far-field radiations. Moreover, antenna-electronics co-designs can be exploited for various on-antenna signal conditioning capabilities, such as power combining, active load modulation, polarization duplexing, and harmonic terminations [1]–[5]. This concept particularly benefits mm-Wave front-ends, due to compact on-chip antennas and intimate interfaces with electronics, and the resultant radical improvements are critical for applications such as 5G-and-beyond communication and radar sensing [6]. Presently, although much effort focuses on antenna-electronics co-design for TX, there are limited explorations on the RX architectures [7], [8].