4.2 An E-Band High-Linearity Antenna-LNA Front-End with 4.8dB NF and 2.2dBm IIP3 Exploiting Multi-Feed On-Antenna Noise-Canceling and Gm-Boosting

In this paper, we explore the antenna-electronics co-design concept on RX topologies to enhance key RX performance at high mm-wave frequencies, such as NF and linearity. For proof-of-concept, we present an E-band high-linearity muiti-feed-antenna-LNA co-designed front-end in a 45nm CMOS SOI process that supports applications like wireless back -haul and automotive radar. It exploits on -antenna noise -canceling, g
_m
-boosting, and power-division to improve E -band RX NF and linearity achievable in silicon front-ends, and the high-resistivity silicon substrate enables high-efficiency on-chip antennas and one-chip integration with front-end electronics without packaging complexity.