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Integration of OTS based back-end selector with HfO2 OxRAM for crossbar arrays | IEEE Conference Publication | IEEE Xplore

Integration of OTS based back-end selector with HfO2 OxRAM for crossbar arrays


Abstract:

In this paper, we propose the integration of a Ge-Sb-Se-N (GSSN) back-end selector with a HfO2/Ti resistive memory (RRAM) in 1S1R configuration. GSSN composition was tune...Show More

Abstract:

In this paper, we propose the integration of a Ge-Sb-Se-N (GSSN) back-end selector with a HfO2/Ti resistive memory (RRAM) in 1S1R configuration. GSSN composition was tuned in order to be optimized for RRAM characteristics, combining low leakage current without degrading operating voltages. Electrical characterization of 1S1R structure was achieved to quantify and extract device features. More than 2 decades were measured between ON and OFF states. Leakage current lower than 1nA was achieved on unselected devices (Vread/3). Modeling was performed in order to understand RRAM and OTS contributions in 1S1R conduction and to identify the best reading strategy. Based on 1S1R electrical performances, crossbar array was investigated predicting >1Mb size for the elementary array tile down to 10nm node.
Date of Conference: 12-15 May 2019
Date Added to IEEE Xplore: 21 June 2019
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Conference Location: Monterey, CA, USA
Citations are not available for this document.

I. Introduction

Resistive Random Access Memories (RRAM) are one of the most promising candidates to replace flash memories in Storage Class Memory (SCM) applications. Their good scalability and their easiness of integration in the Back End of Line (BEOL) allow them to be used in 3D architectures and crossbar arrays, to target high memory density [1]. Intrinsic sneak path remains one of the big issues of such configurations, making essential the use of robust selector devices (1S) connected in series with the memory device (1S1R). Several selector technologies are proposed in literature. Among them, Ovonic Threshold Switching (OTS) selector devices are interesting candidates due to their high ON/OFF current ratio, high ON current, high endurance and high non linearity [2]. OTS selectors are fabricated using amorphous chalcogenide materials, which present a high resistivity, essential to reduce the leakage current in the memory arrays. Their selectivity is based on two levels of conductivity: a low-conductive state (OFF-state) and a metastable conductive state (ON-state) that enables the programming of the memory. GeSe selector with OxRAM device was integrated in [3]. This work, presents the co-integration of Ge-Se-Sb-N OTS selector with HfO2 RRAM in order to significantly enlarge the window margin, improve the insulating capabilities of the 1S1R structure and reduce sneak paths in crossbar arrays, without degrading operating voltages.

Cites in Papers - |

Cites in Papers - IEEE (3)

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1.
Arjun Tyagi, Shahar Kvatinsky, "Assessing the Performance of Stateful Logic in 1-Selector-1-RRAM Crossbar Arrays", 2024 IEEE International Symposium on Circuits and Systems (ISCAS), pp.1-5, 2024.
2.
Zeyu Hu, Weidong Zhang, Robin Degraeve, Daniele Garbin, Zheng Chai, Nishant Saxena, Pedro Freitas, Andrea Fantini, Taras Ravsher, Sergiu Clima, Jian Fu Zhang, Romain Delhougne, Ludovic Goux, Gouri Kar, "New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors", IEEE Transactions on Electron Devices, vol.70, no.2, pp.812-818, 2023.
3.
J.-R. Léquepeys, M. Duranton, S. Bonnetier, S. Catrou, R. Fournel, T Ernst, L. Hérault, D. Louis, A. Jerraya, A. Valentian, F. Perruchot, T. Signamarcheix, E. Vianello, C. Reita, "Overcoming the Data Deluge Challenges with Greener Electronics", ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), pp.7-14, 2021.

Cites in Papers - Other Publishers (1)

1.
Po-Hsun Chen, Chih-Yang Lin, Ting-Chang Chang, Jason K. Eshraghian, Yu-Ting Chao, Wei D. Lu, Simon M. Sze, "Investigating Selectorless Property within Niobium Devices for Storage Applications", ACS Applied Materials & Interfaces, vol.14, no.1, pp.2343, 2022.

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