A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant

A novel high voltage NPN (HV-NPN) device with buried floating P-type (BFP) implant at collector side was developed for electrostatic discharge (ESD) protection in a 130nm low cost high voltage CMOS technology. The characteristics of the novel HV-NPN device using transmission line pulse (TLP) measurements show that a second snapback enhances the failure current and reduces the on-resistance at a certain high current levels. The device mechanism is illustrated with technology computer aided design (TCAD) simulation results.