A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant | IEEE Conference Publication | IEEE Xplore
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A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant

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Jie Jack Zeng; Ruchil Jain; Kyong Jin Hwang; Robert Gauthier
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Abstract:

A novel high voltage NPN (HV-NPN) device with buried floating P-type (BFP) implant at collector side was developed for electrostatic discharge (ESD) protection in a 130nm...Show More

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Abstract:

A novel high voltage NPN (HV-NPN) device with buried floating P-type (BFP) implant at collector side was developed for electrostatic discharge (ESD) protection in a 130nm low cost high voltage CMOS technology. The characteristics of the novel HV-NPN device using transmission line pulse (TLP) measurements show that a second snapback enhances the failure current and reduces the on-resistance at a certain high current levels. The device mechanism is illustrated with technology computer aided design (TCAD) simulation results.
Published in: 2019 IEEE International Reliability Physics Symposium (IRPS)
Date of Conference: 31 March 2019 - 04 April 2019
Date Added to IEEE Xplore: 23 May 2019
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ISSN Information:

DOI: 10.1109/IRPS.2019.8720460
Conference Location: Monterey, CA, USA
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