Abstract:
We report all-Si metasurface based polarizing bandpass filter (PBF) fabricated on 12 inch wafer, employing CMOS-compatible 193nm ArF DUV immersion lithography and ICP etc...Show MoreMetadata
Abstract:
We report all-Si metasurface based polarizing bandpass filter (PBF) fabricated on 12 inch wafer, employing CMOS-compatible 193nm ArF DUV immersion lithography and ICP etch. The fabricated metasurface PBF work on dual short wave infrared bands.
Date of Conference: 03-07 March 2019
Date Added to IEEE Xplore: 25 April 2019
ISBN Information:
Conference Location: San Diego, CA, USA
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Metasurface ,
- Inductively Coupled Plasma ,
- Shortwave Infrared ,
- Scanning Electron Microscopy ,
- Fourier Transform Infrared Spectroscopy ,
- Geometric Parameters ,
- Light Beam ,
- Focused Ion Beam ,
- Finite-difference Time-domain ,
- Polarization Control ,
- Extinction Ratio ,
- Etching Step ,
- Dual Band ,
- E-field Distribution
Contents Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Metasurface ,
- Inductively Coupled Plasma ,
- Shortwave Infrared ,
- Scanning Electron Microscopy ,
- Fourier Transform Infrared Spectroscopy ,
- Geometric Parameters ,
- Light Beam ,
- Focused Ion Beam ,
- Finite-difference Time-domain ,
- Polarization Control ,
- Extinction Ratio ,
- Etching Step ,
- Dual Band ,
- E-field Distribution
