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All-Graphene Planar Double Barrier Resonant Tunneling Diodes | IEEE Journals & Magazine | IEEE Xplore

All-Graphene Planar Double Barrier Resonant Tunneling Diodes


Abstract:

In this work, we propose an atomically-thin all-graphene planar double barrier resonant tunneling diode that can be realized within a single graphene nanoribbon. The prop...Show More

Abstract:

In this work, we propose an atomically-thin all-graphene planar double barrier resonant tunneling diode that can be realized within a single graphene nanoribbon. The proposed device does not require any doping or external gating and can be fabricated using minimal process steps. The planar architecture of the device allows a simple in-plane connection of multiple devices in parallel without any extra processing steps during fabrication, enhancing the current driving capabilities of the device. Quantum mechanical simulation results, based on non-equilibrium Green’s function formalism and the extended Huckel method, show promising device performance with a high reverse-to-forward current rectification ratio exceeding 50 000, and confirm the presence of negative differential resistance within the device’s current-voltage characteristics.
Published in: IEEE Journal of the Electron Devices Society ( Volume: 2, Issue: 5, September 2014)
Page(s): 118 - 122
Date of Publication: 29 May 2014
Electronic ISSN: 2168-6734

References

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