Abstract:
CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct inj...Show MoreMetadata
Abstract:
CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schottky diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.
Published in: Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)
Date of Conference: 17-19 January 2006
Date Added to IEEE Xplore: 30 January 2006
Print ISBN:0-7695-2500-8
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA
Contents Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA
