Abstract:
CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct inj...Show MoreMetadata
Abstract:
CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schottky diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.
Published in: Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)
Date of Conference: 17-19 January 2006
Date Added to IEEE Xplore: 30 January 2006
Print ISBN:0-7695-2500-8
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