Abstract:
A new method is described for produchrg large stress levels in semiconductor devices. The relative change in breakdown voltage induced by uniaxial stress σ was found to b...Show MoreMetadata
Abstract:
A new method is described for produchrg large stress levels in semiconductor devices. The relative change in breakdown voltage induced by uniaxial stress σ was found to be (ΔV/VB)/σ≃-0.48 × 10-12, where stress is given in dynes/cm2. Experimental results are compared with the energy band model for the piezojunction effect.
Published in: Proceedings of the IEEE ( Volume: 56, Issue: 7, July 1968)
