Effect of uniform stress on Si p-n junctions

A new method is described for produchrg large stress levels in semiconductor devices. The relative change in breakdown voltage induced by uniaxial stress σ was found to be (ΔV/V
B
)/σ≃-0.48 × 10
^-12
, where stress is given in dynes/cm
²
. Experimental results are compared with the energy band model for the piezojunction effect.