Microdosimetry of very-high-energy heavy ion beams for electronics testing using silicon-on-insulator detectors

This paper explores the use of microdosimetry with a silicon-on-insulator (SOI) detector for characterizing very-high-energy (VHE), heavy ion beams used specifically for single event effect (SEE) testing of electronics. The detector was deployed at CERN’s heavy ion facility for radiation effects testing and exposed to lead ion beams in the 100 – 1000 MeV per nucleon kinetic energy range. The implications and possible benefits of using microdosimetry for SEE testing purposes are discussed.