Abstract:
Ferroelectric (FE) Hf _{\text {1-x}} ZrxO2 (HZO) thin films have attracted considerable interest for their potential application in Ferroelectric Random-Access Memory (...Show MoreMetadata
Abstract:
Ferroelectric (FE) Hf _{\text {1-x}} ZrxO2 (HZO) thin films have attracted considerable interest for their potential application in Ferroelectric Random-Access Memory (FeRAM) and Ferroelectric Field-Effect Transistors (FeFET), owing to their high dielectric constant, stability, and compatibility with CMOS processes. However, enhancing the polarization switching speed of HZO thin films remains a significant challenge. In this study, we successfully reduced the coercive field and improved the switching speed of HZO devices by integrating ferroelectric and antiferroelectric layers. We employed a high-speed pulsed measurement system with sub-nanosecond resolution to evaluate the switching speed of these devices. An ultrafast switching time of 780 ps at 2V was achieved, as supported by the nucleation-limited switching model. This work demonstrates a promising strategy for enhancing the switching speed in HZO films through structural engineering, offering valuable insights for practical device applications.
Published in: IEEE Electron Device Letters ( Volume: 46, Issue: 1, January 2025)
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- IEEE Keywords
- Index Terms
- Layered Structure ,
- Low Voltage ,
- Ultrafast Switching ,
- Thin Films ,
- High Stability ,
- Switching Time ,
- Engineering Structures ,
- High Dielectric Constant ,
- Coercive Field ,
- Switching Speed ,
- Polarization Switching ,
- Speed Of Devices ,
- Ferroelectric Layer ,
- Ferroelectric Memory ,
- Ferroelectric Field-effect Transistor ,
- Energy-dispersive X-ray Spectroscopy ,
- Energy Barrier ,
- Current Response ,
- High Polarity ,
- Oxygen Deficiency ,
- Ferroelectric Materials ,
- Atomic Layer Deposition ,
- Switching Transients ,
- Fast Switching Speed ,
- Device Area ,
- Displacement Current ,
- Back-end-of-line ,
- Physical Vapor Deposition ,
- Switching Process ,
- Nanosecond Range
- Author Keywords
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Layered Structure ,
- Low Voltage ,
- Ultrafast Switching ,
- Thin Films ,
- High Stability ,
- Switching Time ,
- Engineering Structures ,
- High Dielectric Constant ,
- Coercive Field ,
- Switching Speed ,
- Polarization Switching ,
- Speed Of Devices ,
- Ferroelectric Layer ,
- Ferroelectric Memory ,
- Ferroelectric Field-effect Transistor ,
- Energy-dispersive X-ray Spectroscopy ,
- Energy Barrier ,
- Current Response ,
- High Polarity ,
- Oxygen Deficiency ,
- Ferroelectric Materials ,
- Atomic Layer Deposition ,
- Switching Transients ,
- Fast Switching Speed ,
- Device Area ,
- Displacement Current ,
- Back-end-of-line ,
- Physical Vapor Deposition ,
- Switching Process ,
- Nanosecond Range
- Author Keywords