Ultrafast Switching of Ferroelectric HfO2-ZrO2 Under Low Voltage with Layered Structure

Ferroelectric (FE) Hf
_1-x
Zr
_x
O
₂
(HZO) thin films have attracted considerable interest for their potential application in Ferroelectric Random-Access Memory (FeRAM) and Ferroelectric Field-Effect Transistors (FeFET), owing to their high dielectric constant, stability, and compatibility with CMOS processes. However, enhancing the polarization switching speed of HZO thin films remains a significant challenge. In this study, we successfully reduced the coercive field and improved the switching speed of HZO devices by integrating ferroelectric and antiferroelectric layers. We employed a high-speed pulsed measurement system with sub-nanosecond resolution to evaluate the switching speed of these devices. An ultrafast switching time of 780 ps at 2V was achieved, as supported by the nucleation-limited switching model. This work demonstrates a promising strategy for enhancing the switching speed in HZO films through structural engineering, offering valuable insights for practical device applications.