Abstract:
We report the first demonstration on four new wavelengths of 609 nm, 613 nm, 618 nm in both \sigma - and \pi -polarized direction based on continuous-wave Pr $^{3...Show MoreMetadata
Abstract:
We report the first demonstration on four new wavelengths of 609 nm, 613 nm, 618 nm in both \sigma - and \pi -polarized direction based on continuous-wave Pr ^{3+} :LiYF4(Pr ^{3+} :YLF) lasers. The transitions mechanism combined dual upper energy levels of ^{3}\text{P}_{1} and ^{1}\text{I}_{6} with Stark sub-levels of ^{3}\text{H}_{6} and ^{3}\text{F}_{2} was designated. The CW lasers achieve output power greater than watt levels at room temperature, with 2.36 W at 609 nm, 1.85 W at 618 nm, in the \sigma -polarized direction and 1.93 W at 613 nm, 1.40 W at 618 nm, in the \pi -polarized direction.
Published in: IEEE Photonics Technology Letters ( Volume: 36, Issue: 6, 15 March 2024)
Funding Agency:
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Contents Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
Department of Electronic Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, School of Electronic Science and Engineering, and the National Model Microelectronics College, Xiamen University, Xiamen, China
