On-Chip Carrier-Selective Contact Photovoltaic Cell

This article proposes an on- chip photovoltaic cell equipped with a tunnel oxide passivated contact (TOPCon) exhibiting selective carrier contact. The proposed structure utilizes the gate region as the TOPCon structure and performs best when the gate oxide is high-
$\kappa $
hafnium oxide (HfO2). Oxide thicknesses lower than 1.5 nm enable the utilization of the device as a solar cell; therefore, it can be fabricated using high-end oriented CMOS processes. Furthermore, TOPCon technology at the bulk contact is observed to be more important than that at the emitter contact; however, a combination of the two yields an improved
${V}_{\text {OC}}$
value. On applying the full TOPCon technology,
${V}_{\text {OC}}$
is improved by approximately 20 mV from 601 to 619 mV, and
$\eta $
is improved by approximately 0.5% from 15.20% to 15.73% compared to the conventional surface diffusion (SD)-based structure.