Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization | IEEE Journals & Magazine | IEEE Xplore

Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization


Abstract:

A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus ...Show More

Abstract:

A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFETs is enabled. The model is extended to include the diffusion region resistance effects caused by the drain-side doping by applying the methodology of the industry-standard high-voltage MOSFET model HiSIM_HV. Usage for studying possible device optimizations revealed that clear improvements in the subthreshold characteristics due to suppression of SCEs can be achieved by slightly increasing the drain-side diffusion resistance. Disadvantageous effects on the device and circuit performances were found to be negligible.
Page(s): 1293 - 1301
Date of Publication: 22 October 2019
Electronic ISSN: 2168-6734

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