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Demonstration of High Output Power Density (50 W/cc) Converter using 600 V SJ-MOSFET and SiC-SBD | VDE Conference Publication | IEEE Xplore
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Demonstration of High Output Power Density (50 W/cc) Converter using 600 V SJ-MOSFET and SiC-SBD

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Abstract:

This paper reports on the possibility of a high output power density converter and, for that purpose, refers to a demonstration of a small-volume DC-DC down converter usi...Show More

Abstract:

This paper reports on the possibility of a high output power density converter and, for that purpose, refers to a demonstration of a small-volume DC-DC down converter using a 600 V Superjunction MOSFET (SJ-MOSFET) and a silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the target for the year 2018.
Date of Conference: 07-09 June 2006
Date Added to IEEE Xplore: 01 June 2011
Print ISBN:978-3-8007-2972-2
Conference Location: Naples, Italy

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