Demonstration of High Output Power Density (50 W/cc) Converter using 600 V SJ-MOSFET and SiC-SBD

This paper reports on the possibility of a high output power density converter and, for that purpose, refers to a demonstration of a small-volume DC-DC down converter using a 600 V Superjunction MOSFET (SJ-MOSFET) and a silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the target for the year 2018.