Abstract:
Two dimensional photoemission profiles from n-MOSFETs supplying various pulse waveforms to the gate were measured and analyzed by a photoemission microscope. TPC (Total P...Show MoreMetadata
Abstract:
Two dimensional photoemission profiles from n-MOSFETs supplying various pulse waveforms to the gate were measured and analyzed by a photoemission microscope. TPC (Total Photon Counts) were proportional to average drain and substrate currents under dynamic operation as observed under DC operation. TPC profiles of wide channel width MOSFETs, however, varied along the channel width direction under dynamic operation. It suggests that the substrate current distribution fluctuates along the channel width direction and affects the device lifetime.
Published in: ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)
Date of Conference: 16-16 March 2000
Date Added to IEEE Xplore: 15 April 2003
Print ISBN:0-7803-6275-7
