A study on hot-carrier-induced photoemission in n-MOSFETs under dynamic operation

Two dimensional photoemission profiles from n-MOSFETs supplying various pulse waveforms to the gate were measured and analyzed by a photoemission microscope. TPC (Total Photon Counts) were proportional to average drain and substrate currents under dynamic operation as observed under DC operation. TPC profiles of wide channel width MOSFETs, however, varied along the channel width direction under dynamic operation. It suggests that the substrate current distribution fluctuates along the channel width direction and affects the device lifetime.