Neutron and Total Ionizing Dose Irradiation Hardened LDO

A hardened LDO for dual-irradiation environment utilization, neutron and total ionizing dose (TID) irradiation, is proposed, fabricated, and testified. Comparison is made between BJT and MOSFET to find the most suitable device for the hardening design.The basic strategy is to focus on the hardening of the three core parts, the bandgap, the error amplifier, and the NLDMOS, in the circuit. The hardened LDO is fabricated using 180 nm BCD process. The neutron irradiation experiment is performed using CFBR-II reactor. The dose is 1.2×10¹² n/cm^-2. The TID irradiation experiment is performed using ⁶⁰Co at 50 rad(Si)/s, up to 300 krad(Si).