300 MM Wafer Laser Anneal Process Development for Applications of Multiple Process Condition in Different Zones on Single Wafer

With technology developing, laser annealing is attracting more and more interests because of its property of lower thermal budget, near surface activation for shallow junction application, rapidly cooling rate, etc. In this work, the wafer after implantation process was divided into different zones, and process was developed to implement different laser annealing condition in different zones. The effects of different laser annealing parameters on the sheet resistance and RS uniformity of the different zones on implanted wafer were studied and evaluated, and Secondary Ion Mass Spectrometry (SIMS) was used to check its doping profile after annealing. From the measured data, this method can have potential value for tool matching, device splits and related applications.