750V Narrow Mesa IGBT vs SJ-IGBT: Performance and SC-SOA Assessment

Recently, a number of "fine pattern" and "Narrow Mesa" IGBT cell structures with sub-μm trench and mesa dimensions have been proposed to achieve improved on-state and switching losses. On the other hand, Super Junction IGBT structures have also been proposed. For the first time, in this paper, we analyse the Narrow Mesa Super Junction IGBT (NM SJ-IGBT) performance in terms of on-state and switching trade-off as well as short-circuit safe operating area (SCSOA) robustness. It is shown that a NM SJ-IGBT structure can have not only a better Losses-vs-Vce(sat) trade-off but also a better SCSOA in comparison with conventional NM-IGBT. Keywords—IGBT, Narrow mesa, MOS, Trench, Super-junction.