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A SiC IGBT Model With Accurate Static and Dynamic Tracking Capability | IEEE Journals & Magazine | IEEE Xplore

A SiC IGBT Model With Accurate Static and Dynamic Tracking Capability


Abstract:

The simple and accurate SiC insulated-gate bipolar transistor (IGBT) model is necessary for circuit designs and optimizations of high-voltage and high-power converters. T...Show More

Abstract:

The simple and accurate SiC insulated-gate bipolar transistor (IGBT) model is necessary for circuit designs and optimizations of high-voltage and high-power converters. This article provides a highly accurate SiC IGBT model with static and dynamic tracking capability. The {C}{V} curves are extracted from transient waveforms, rather than datasheet or direct measurement, to model the punchthrough (PT) effect and near-ZCS effect completely. Five controlled current sources and passive components are used to model the static and dynamic characteristics. The interpolation calculation method instead of the conventional polynomial fitting method is adopted to reproduce the {I}{V} curves and {C}{V} curves truly. The {I}{V} curves are almost the same with measured results. The switching waveforms under different bus voltages, gate resistances, and load currents are widely verified, which is suitable for loss evaluation and circuit designs. The proposed model is more concise, more accurate, and faster than the existing complex physics-based model and less accurate behavioral model (BM), which is suitable for system-level circuit simulation based on SiC IGBT.
Published in: IEEE Transactions on Electron Devices ( Volume: 69, Issue: 7, July 2022)
Page(s): 3833 - 3840
Date of Publication: 25 May 2022

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