The Development of Accur ate Model Considering the Proximity Effect to Guide the BEOL Metal Scheme Design in the Advanced Logic Device | IEEE Conference Publication | IEEE Xplore
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The Development of Accur ate Model Considering the Proximity Effect to Guide the BEOL Metal Scheme Design in the Advanced Logic Device

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Stanley S.-Y. Chang; W.-C. Kang; T.-H. Chang
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Abstract:

The accurate model to calculate nanoscale metal resistivity in the advanced logic device is developed. In this model, vicinity compensation for the proximity effect is co...Show More

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Abstract:

The accurate model to calculate nanoscale metal resistivity in the advanced logic device is developed. In this model, vicinity compensation for the proximity effect is considered together with bulk, grain boundary, and interface scatterings. With this model, the design optimization of Cu reflow and Ru liner thickness are studied in N10 and N5 technology nodes. Our modeling results agree with experimental insights of metal interconnects, guiding the design of future BEOL metal scheme and Power via applications.
Published in: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
Date of Conference: 18-21 April 2022
Date Added to IEEE Xplore: 10 May 2022
ISBN Information:
Print on Demand(PoD) ISSN: 1930-8868
DOI: 10.1109/VLSI-TSA54299.2022.9771036
Conference Location: Hsinchu, Taiwan

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