Abstract:
This brief presents a compact model to capture the major difference between high-voltage (HV) and low-voltage MOSFETs, i.e., the carrier velocity saturation effect in the...Show MoreMetadata
Abstract:
This brief presents a compact model to capture the major difference between high-voltage (HV) and low-voltage MOSFETs, i.e., the carrier velocity saturation effect in the drift region of HV MOSFETs. We discuss the numerical and behavioral issues that can arise in SPICE simulations with the existing current-dependent formulation in Berkeley-Short-Channel-IGFET model (BSIM) for HV transistors. We then demonstrate how a voltage-dependent formulation can mitigate them without losing simplicity and accuracy. We also validate the proposed model against experimental data of HV transistors.
Published in: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ( Volume: 42, Issue: 1, January 2023)
Funding Agency:
Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley, CA, USA
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, India
Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, India
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley, CA, USA
Contents Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley, CA, USA
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, India
Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, India
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley, CA, USA
