Abstract:
Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resista...Show MoreMetadata
First Page of the Article
Abstract:
Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resistance of 1.7 m Omega -cm/sup 2/, about half the value obtained by present production DMOS devices. The second is a trench DMOS technology developed to yield 1.1 m Omega cm/sup 2/ of specific on-resistance. Devices fabricated from both technologies exhibit superior rugged device performances in unclamped inductive switching (UIS). Design and process considerations are also discussed.<>
Published in: Automotive Power Electronics
Date of Conference: 28-29 January 1989
Date Added to IEEE Xplore: 06 August 2002
First Page of the Article
