Abstract:
The goal of this work is to present a pulsed-voltage measurement scheme which allows separation of impact-ionization and self-heating effects in the lead-up to device bre...Show MoreMetadata
Abstract:
The goal of this work is to present a pulsed-voltage measurement scheme which allows separation of impact-ionization and self-heating effects in the lead-up to device breakdown in high-speed SiGe HBTs, and demonstrate that it enables probing of the dynamic behavior of the operative breakdown mechanisms. By leveraging pulsed-mode measurements, we show an interesting time-dependence of the dominant operative breakdown mechanism. Investigation of the time-dependence of breakdown will facilitate a better understanding of the dynamics of the RF safe operating area (RF-SOA) of SiGe HBTs, which is critical for extracting maximum performance in SiGe for highspeed circuits.
Published in: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Date of Conference: 05-08 December 2021
Date Added to IEEE Xplore: 25 January 2022
ISBN Information:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
Contents School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
