28-32 GHz Wideband LNA for 5G Applications

In order to meet the ever-increasing demands of bandwidth in modern communication systems, mm-Wave frequency bands emerge as a possible way forward. LNA is the most critical component in an RF receiver chain. This article presents a two-stage mm-Wave LNA for 5G applications. The first stage is used to provide a major portion of overall LNA gain and partial noise cancellation. The use of Common Gate as an input impedance provides wideband matching at the input. Without any significant power and area consumption, the second stage is used to further increase the gain along with noise cancellation. Two small inductors are employed to resonate the circuit at 30GHz to mitigate the effect of capacitance in mm-Wave frequency band. The proposed LNA is designed and simulated using TSMC 65nm Bulk CMOS technology. Post simulation results show that the designed LNA achieves a peak S21 of 18.48dB with a wideband 3-dB bandwidth in the range of 26 to 33.6 GHz. The NF is also less than 3dB over the entire band of interest. The proposed LNA occupies a 300×100 µm² area with a power consumption of 17 mW including the output buffer stage.