Loading [MathJax]/extensions/MathMenu.js
A system to measure reverse recovery time and stored charge at ultrafast power diodes | IEEE Conference Publication | IEEE Xplore
Subscribe
ADVANCED SEARCH
Conferences >2001 International Semiconduc...

A system to measure reverse recovery time and stored charge at ultrafast power diodes

PDF
F. Draghici; X. Jorda; G. Brezeanu; M. Badila; J. Millan; P. Godignon
All Authors

Abstract:

This paper presents a reverse recovery time (t/sub rr/) and stored charge (Q/sub rr/) measurement circuit for ultrafast Si and SiC power diodes. The circuit developed acc...Show More

Metadata

Abstract:

This paper presents a reverse recovery time (t/sub rr/) and stored charge (Q/sub rr/) measurement circuit for ultrafast Si and SiC power diodes. The circuit developed according to the JESD24-10 standard specification allows one to obtain 0.1-5 A forward current, 10-100 V reverse voltage and 50-500 A//spl mu/s di/dt.
Published in: 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547)
Date of Conference: 09-13 October 2001
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-6666-2
DOI: 10.1109/SMICND.2001.967508
Conference Location: Sinaia, Romania
Contents

Contact IEEE to Subscribe

References

References is not available for this document.

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.