A system to measure reverse recovery time and stored charge at ultrafast power diodes

This paper presents a reverse recovery time (t/sub rr/) and stored charge (Q/sub rr/) measurement circuit for ultrafast Si and SiC power diodes. The circuit developed according to the JESD24-10 standard specification allows one to obtain 0.1-5 A forward current, 10-100 V reverse voltage and 50-500 A//spl mu/s di/dt.