Abstract:
An overview of different charge and voltage storage global shutter (GS) pixel arrays developed over the last 15 or so years reflects the advancement of CMOS technology. H...Show MoreMetadata
Abstract:
An overview of different charge and voltage storage global shutter (GS) pixel arrays developed over the last 15 or so years reflects the advancement of CMOS technology. High dynamic range and multitap GS pixels found their applications in automotive and other emerging fields. Both front side illuminated and back side illuminated (BSI) pixel structures are covered with highlights on the impact to the GS pixel performance including near-infrared and visual sensitivity, GS efficiency, pixel crosstalk, and angular response improvements. Proliferation of BSI per pixel stacked GS pixels pushed sizes into the 2.2- \mu \text{m} range and promised even further pixel size reduction.
Published in: IEEE Transactions on Electron Devices ( Volume: 69, Issue: 6, June 2022)