A 2.2kV Organic Semiconductor- Based Lateral Power Device

The application of organic field-effect transistors (OFETs) in the power device realm has not been explored yet. To achieve a high breakdown voltage, a novel lateral drift region OFET(LDR-OFET) is proposed in this letter. By employing the diketopyrrolopyrrole-based polymer(DPPT-TT) and Poly (methyl methacrylate) (PMMA) to form semiconductor and insulator layers respectively, the fabricated LDR-OFET, despite the simple process and low cost, exhibits an excellent off-state breakdown capability while maintaining a considerable on-state performance. With a
$20~\mu \text{m}$
length of the drift region, the LDR-OFET realizes 2200V breakdown voltage on a spin-coated 50nm thick semiconductor layer. The average electric field of the proposed device reaches 1.18MV/cm before an avalanche-like breakdown occurs. The physical nature of the breakdown mechanism is explored using the 1-D PIN equivalent structure and avalanche breakdown theory. The correctness and effectiveness of the proposed LDR-OFET and breakdown analysis are well demonstrated and validated by experimental results. The LDR-OFETs are expected to fill the blank of organic power devices and be the core component of future organic power integrated circuits.