Abstract:
This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS) rectifiers fabricated by etch and regrowth of p-GaN. A reverse blocking voltage...Show MoreMetadata
Abstract:
This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS) rectifiers fabricated by etch and regrowth of p-GaN. A reverse blocking voltage near 1500 V was achieved at ~ 1 mA reverse leakage, with a sub 1 V turn-on and a specific on-resistance of 10 mΩ-cm2. This result is compared to other reported JBS devices in the literature and our device demonstrates the lowest leakage slope at high reverse bias. A large initial leakage current is present near zero-bias which is attributed to a combination of inadequate etch-damage removal and passivation induced leakage current.
Date of Conference: 07-11 November 2021
Date Added to IEEE Xplore: 21 December 2021
ISBN Information:
Print on Demand(PoD) ISSN: 2641-8274