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A Charge-Domain Computation-In-Memory Macro with Versatile All-Around-Wire-Capacitor for Variable-Precision Computation and Array-Embedded DA/AD Conversions | IEEE Conference Publication | IEEE Xplore

A Charge-Domain Computation-In-Memory Macro with Versatile All-Around-Wire-Capacitor for Variable-Precision Computation and Array-Embedded DA/AD Conversions


Abstract:

A charge-domain SRAM-based CIM macro is proposed to implement efficient neural accelerator with variable input/weight/output precisions. A versatile All-Around-Wire-Capac...Show More

Abstract:

A charge-domain SRAM-based CIM macro is proposed to implement efficient neural accelerator with variable input/weight/output precisions. A versatile All-Around-Wire-Capacitor (AAWC) is introduced to enable accurate charge-domain MAV operation with 1–5 bit variable-precision weight capability with 10T SRAM cell structure. The AAWC also allows variable-precision array-embedded 1–5 bit digital-to-analog (DA) conversion for input, and 1–6 bit analog-to-digital (AD) conversion for output without additional passive devices. Such array-embedded DA/AD conversion scheme significantly reduces area overhead and simplifies peripheral circuits to achieve high array efficiency while achieving high energy efficiency of 24–330 TOPS/W.
Date of Conference: 13-22 September 2021
Date Added to IEEE Xplore: 13 December 2021
ISBN Information:
Conference Location: Grenoble, France

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