I. Introduction
The thermal oxidation process of silicon has been of general interest for researchers in both engineering and scientific fields during the last five decades [1]. The Si/SiO2 interface is unrivaled in terms of quality and usability for nano-technologies. The interplay between Si and O gains even more importance since oxygen is one of the most common impurities in commercially grown single-crystalline silicon [2]. With the continuous downscaling trend for smaller devices, understanding the initial surface oxidation as well as the growth of amorphous SiO2 (a-SiO2) on a Si substrate becomes crucial.