Abstract:
The goal of this work is the design, realization, and characterization of a pixel-level front-end in 0.15\mu \mathrm{m} CMOS technology, that allows to directly convert...Show MoreMetadata
Abstract:
The goal of this work is the design, realization, and characterization of a pixel-level front-end in 0.15\mu \mathrm{m} CMOS technology, that allows to directly convert in the digital domain the weak output signal from the Field-Effect Transistor (FET) TeraHertz (THz) detector, in a noise-efficient way. The chosen architecture is a Continuous-Time Sigma-Delta Incremental Analog-to-Digital Converter (CT \Sigma\Delta IADC) with a current DAC feedback, chopper technique and digital lock-in modulation. The measured SNR of this interface is 67.45dB, corresponding to an equivalent number of bit (ENOB) of 10.91. The pixel readout area is 0.072mm2, and the power consumption is 65\mu \mathrm{W} from 1.8V supply. The Noise Equivalent Power (NEP) of the THz detector and readout chain is 268\text{pW}/\sqrt{\text{Hz}}. The readout channel Input Referred Noise (IRN) is 1.2\mu \text{Vrms} with the FET, and 0.94\mu \text{Vrms} for the channel without detector.
Date of Conference: 13-22 September 2021
Date Added to IEEE Xplore: 13 December 2021
ISBN Information: