SIMS Methodology Study of Indium Implant Quantification

Secondary ion mass spectrometry (SIMS) is typically used for implantation depth profiling and dosage quantification. Energy filtering approach is commonly used to eliminate the mass interference caused by the molecular ions of Si [1]. However, it is accompanied by a severe loss of the measurement precision of dosage and therefore it is not suitable for low dosage (E+13 at/cm²) indium implant quantification. In this paper, SIMS analysis by 2 types of test method – with and without voltage offset will be discussed to decide a more appropriate approach of low dose indium implant sample evaluation.