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940 nm High Power Single Transverse Mode Coherent VCSEL Array With Tunnel Junction Lithographic Aperture | IEEE Conference Publication | IEEE Xplore

940 nm High Power Single Transverse Mode Coherent VCSEL Array With Tunnel Junction Lithographic Aperture


Abstract:

We report a high power single transverse mode coherent VCSEL array emitting at ~940 nm. The phase coupled emitters are defined by patterning a tunnel junction located in ...Show More

Abstract:

We report a high power single transverse mode coherent VCSEL array emitting at ~940 nm. The phase coupled emitters are defined by patterning a tunnel junction located in the cavity. Single transverse mode power of ~12.5mW out of an array with 7 emitters is demonstrated.
Date of Conference: 10-14 October 2021
Date Added to IEEE Xplore: 26 November 2021
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Conference Location: Potsdam, Germany

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