Field-Free Magnetic Tunnel Junction for Logic Operations Based on Voltage-Controlled Magnetic Anisotropy

This letter demonstrates how to perform logic operations on the data stored in magnetic tunnel junction (MTJ) devices within a memory array, without any intermediate electronic circuitry. The basic structure consists of one MTJ, exhibiting voltage-controlled magnetic anisotropy, in series connection with a MOSFET access device. The material implication and
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logic operations can be performed without any external magnetic field by supplying a proper bias voltage to the circuit structure. This innovative solution enables higher energy-delay efficiency and better integration density than conventional CMOS-based computational architectures.