Energy-Efficient Reliable HZO FeFET Computation-in-Memory with Local Multiply & Global Accumulate Array for Source-Follower & Charge-Sharing Voltage Sensing

Energy efficient, high throughput, noise immune, high density HZO FeFET Computation-in-Memory (CiM) is proposed. Local Multiply & Global Accumulate Array is realized by source-follower read, which multiplies neural network inputs and weights (FeFET VTH), and charge-sharing, which accumulates multiplied values. Proposed CiM is immune to read-disturb. After 10-year data-retention, 3 bit/cell FeFET is feasible. ×64 energy efficient, 66 TOPS/W, reliable multiply-accumulate (MAC) operation is achieved.