Contents I. Introduction
The main application of power electronics is to control or perform electrical power conversions such as DC/DC or DC/AC. Traditionally it is made-up of silicon-based semiconductors such as IGBTs (Insulated-Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistor). With the introduction of silicon carbide, MOSFETs are more effective than ever before, offering unique benefits compared to traditional silicon components. SiC is a better power semiconductor than Si, because of a 10-times higher electric-field breakdown capability, higher thermal conductivity and higher temperature operation capability due to a wide electronic bandgap. SiC excels over Si as a semiconductor material in 600-V and higher-rated breakdown voltage devices[1]–[6]. There is an emerging market in adopting Silicon Carbide (SiC) based semiconductors for this power electronic applications due to its low switching losses [7]. Control signal schemes play an important role in inverter applications to provide steady and desirable output. The PWM modulation strategies such as Sinusoidal Pulse Width Modulation (SPWM) and Third Harmonic Injection Pulse Width Modulation (THIPWM) are commonly adopted for converter applications. Following the successful implementation of an open loop system, the closed loop control is also a crucial aspect in most applications as to ensure robustness performance of the system. In this paper, the two control schemes; SPWM and THIWPM are compared to understand the differences in their application results. The closed loop controller is also implemented to examine and verify the performance of the 3-phase inverter system.
