New Generation High Power Density 3300V RC-IGBT Power Module

In this paper, it presents a new generation high power density 3300V RC-IGBT power module. IGBT modules have been increasingly required to be smaller in size while exhibiting lower power dissipation and higher reliability. To meet the requirements, a 3300V reverse conducting IGBT (RC-IGBT) module is been developed by using an RC-IGBT that integrates an IGBT and a freewheeling diode (FWD) functions into one chip. When conducting or reverse conducting, it can use the non-working functional area on the chip to dissipate heat. The thermal resistance of RC-IGBT module is reduced by more than 30%, and its on-state characteristics are better than TIM1500ESM33-PSA012 in the same test conditions, which increase the power capacity and power density of the 3300V module to a new level.