Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias

Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance. Once the equivalent transistor is turned on, current flows in IGBT become active and ignite the underlying bipolar junction transistors (BJT). BJT brings up more current contributions which are basically due to diodes. Therefore, the current flows from Emitter (the bottom) up to Collector (the top) through N-type drift region. The electrical characteristic curves of current I_EC versus V_EC voltage shows the dependence of V_eq which is closely associated with the current introduced by MOSFET transistor because of Ohm's Law V_eq=I_DSR. The encouraging results can be seen as the fitting to the measured I-V data.