Abstract:
This brief presents a new quenching circuit with a metal fuse that aims to protect readout integrated circuit (ROIC) from breakdown due to unexpectedly high voltage from ...Show MoreMetadata
Abstract:
This brief presents a new quenching circuit with a metal fuse that aims to protect readout integrated circuit (ROIC) from breakdown due to unexpectedly high voltage from Geiger-mode avalanche photodiode (GmAPD) arrays. Fuse resistances in states of pre-burnout and post-burnout are investigated to satisfy requirements of rapid quenching and high voltage protection, respectively. Several fuse options using commercial mixed-signal CMOS processes, such as metal and polysilicon, are compared in detail. Meander metal fuse is the most suitable candidate according to measurement results. A rapidly quenching circuit integrated with metal fuse is developed using a 0.18 \mu \text{m} CMOS process. After being bonding with GmAPDs and resistors, test results show that this circuit could endure a high voltage of 75 V, demonstrating that this innovative design can contribute in a low-cost and high-reliable way to high-yield large-format GmAPD arrays.
Published in: IEEE Transactions on Circuits and Systems II: Express Briefs ( Volume: 68, Issue: 10, October 2021)
Funding Agency:
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
School of Information Science and Technology, ShanghaiTech University, Shanghai, China
University of Chinese Academy of Sciences, Beijing, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Frontier Institute of Chip and System, Fudan University, Shanghai, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Contents State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
School of Information Science and Technology, ShanghaiTech University, Shanghai, China
University of Chinese Academy of Sciences, Beijing, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Frontier Institute of Chip and System, Fudan University, Shanghai, China
State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
