Abstract:
This paper presents a transconductance boosting method with a stacked current-reused inverter-based gain cell for ultra-low power RF applications. For the same bias curre...Show MoreMetadata
Abstract:
This paper presents a transconductance boosting method with a stacked current-reused inverter-based gain cell for ultra-low power RF applications. For the same bias current, the proposed method can boost the conventional inverter-based amplifier transconductance by twice, an overall quadruple boost compared to a single MOSFET in sub-threshold region. A 65nm CMOS based post-layout level implementation of the LNA including an on-chip matching network shows a 1.3 dB better noise figure as single inverter implementation for the same power of 45 μW. A cross-coupled stacked-gm VCO implementation achieves 44% higher voltage swing as that of the cross coupled single inverter at 74μA current, owing to the doubled gm value.
Date of Conference: 22-28 May 2021
Date Added to IEEE Xplore: 27 April 2021
Print ISBN:978-1-7281-9201-7
Print ISSN: 2158-1525
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
Contents Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
