Abstract:
Gallium Oxide is an ultra-wide band gap semiconductor that provides key benefits for high-performance power devices, including high electric breakdown field strength, goo...Show MoreMetadata
Abstract:
Gallium Oxide is an ultra-wide band gap semiconductor that provides key benefits for high-performance power devices, including high electric breakdown field strength, good transport properties, well-controlled doping, and large-area melt-grown native substrates. The unique properties of this material also provide significant opportunities for heterostructure and device engineering. In this paper, we discuss some key advances toward achieving high-performance devices based on Gallium Oxide, and discuss future opportunities and challenges in this exciting area of research.
Published in: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Date of Conference: 16-19 November 2020
Date Added to IEEE Xplore: 09 April 2021
ISBN Information: