In-Memory-Searching Architecture Based on 3D-NAND Technology with Ultra-high Parallelism

We present an in-memory-searching (IMS) architecture which features ultra-high parallel operation. It is based-on high-density, low-power, and low-cost 3D-NAND technology. The IMS unit cell composition, operation algorithm, and array structures are discussed in detail. Reliability concerns including program/read disturbance and retention issues are evaluated and solutions provided. The proposed novel coding scheme can not only provide flexibility to the searching function but also help to improve reliability. An application example on machine learning with k-NN model is demonstrated with good results. The IMS searching efficiency can evolve along with the 3D-NAND technology and is promising to play a key role in the future memory-centric computing systems.